Current Issue : July - September Volume : 2015 Issue Number : 3 Articles : 5 Articles
The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and high ???? gate oxide\nHfO2 layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2 thickness, the doping depth, and\nconcentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages\nhave been individually simulated and analyzed. The determination of the above parameters is suggested based on their effect\non maximum drain current, leakage current, saturated voltage, and so forth. It is found that the channel length decreases with\nthe increase of the maximum drain current and leakage current simultaneously. Short channel effects start to appear when the\nchannel length is less than 0.9 ????m and experience sudden sharp increases which make device performance degrade and reach\ntheir operating limits when the channel length is further lessened down to 0.5 ????m. The results demonstrate the usefulness of short\nchannel simulations for designs and optimization of next-generation electrical and photonic devices....
A novel controlmethod is proposed for the three-phase four-wire four-leg active power filter (APF) to realize the accurate and realtime\ncompensation of harmonic of power system, which combines space vector pulse width modulation (SVPWM) with triangle\nmodulation strategy. Firstly, the basic principle of the APF is briefly described. Then the harmonic and reactive currents are derived\nby the instantaneous reactive power theory. Finally simulation and experiment are built to verify the validity and effectiveness of the\nproposed method.The simulation results show that the response time for compensation is about 0.025 sec and the total harmonic\ndistortion (THD) of the source current of phase A is reduced from 33.38% before compensation to 3.05% with APF....
A new proposed compensation driver circuit of flat-panel display (FPD) based on organic light emitting diodes (OLEDs) and on\npoly-crystalline silicon thin-film transistors (poly-Si TFTs) is presented. This driver circuit is developed for an active-matrix organic\nlight-emitting-diode (AMOLED) display and its efficiency is verified compared with the conventional configuration with 2 TFTs.\nAccording to results, this circuit is suitable to achieve acceptable level for power consumption, high contrast, maximum gray levels,\nand better brightness. And, to show this, a stable driving scheme is developed for circuit with much compensation such as against\nthe data degradation, the threshold voltage dispersions of TFT drive, and suppression of TFT leakage current effect....
This paper studies the effects of proton irradiations on Super Junction High Voltage power MOSFETs to realize transistors with\nfast diode. Experiments were performed on a sample of 600V power MOSFETs and achieved results were compared to standard\nirradiated devices by electrons....
Nowadays, analog and mixed-signal (AMS) IC designs, mainly found in the frontends of large ICs, are highly dedicated, complex,\nand costly. They form a bottleneck in the communication with the outside world, determine an upper bound in quality, yield,\nand flexibility for the IC, and require a significant part of the power dissipation. Operating very close to physical limits, serious\nboundaries are faced. This paper relates, from a high-level point of view, these boundaries to the Shannon channel capacity and\nshows how the AMS circuitry forms a matching link in transforming the external analog signals, optimized for the communication\nmedium, to the optimal on-chip signal representation, the digital one, for the IC medium. The signals in the AMS part itself are\nconsequently not optimally matched to the IC medium. To further shift the frontiers of AMS design, a matching-driven design\napproach is crucial for AMS. Four levels will be addressed: technology-driven, states-driven, redundancy-driven, and nature-driven\ndesign. This is done based on an analysis of the various classes of AMS signals and their specific properties, seen from the angle of\nredundancy. This generic, but abstract way of looking at the design process will be substantiated with many specific examples....
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